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We anneal GaN samples in ultra high vacuum system for two times at the same temperature of 710 °C, and activate the sample after each heating by Cs/O. The vacuum level, residual gas, QE, and photocurrents are compared. We find, for the 1st annealing vacuum level line has a shape of “W”, but the 2nd looks like “V”. The residual gases include H2, H2O, N2, and CO2 mainly. Nothing else has been detected...
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