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As unique building blocks for next‐generation optoelectronics, high‐quality 2D p–n junctions based on semiconducting transition metal dichalcogenides (TMDs) have attracted wide interest, which are urgent to be exploited. Herein, a novel and facile electron doping of WSe2 by cetyltrimethyl ammonium bromide (CTAB) is achieved for the first time to form a high‐quality intramolecular p–n junction with...
In article number 1906499, Yuyan Wang, Junying Zhang, and co‐workers achieve novel and facile electron doping of 2D WSe2 by cetyltrimethyl ammonium bromide to form a high‐quality lateral p–n homojunction with superior optoelectronic properties. The high switching light ratio, superior photoresponsivity, and specific detectivity of the device demonstrate its promising application for high‐sensitivity...
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