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An enabling superjunction device technology, which is fully integrated on the partial silicon on insulator (PSOI) platform using the bulk silicon substrate, is proposed and fabricated. The proposed technology has the potential to eliminate the substrate assisted depletion. It enables the implementation of lateral superjunction power MOSFET (SJ LDMOS) on bulk silicon substrate without sacrificing its...
The lateral superjunction power MOSFET device fabricated on the bulk silicon substrate suffers from the substrate-assisted depletion effect, which causes charge imbalance and thus limits the sustainable voltage rating. An enabling device technology, which is fully integrated on the partial silicon on insulator (PSOI) platform using the bulk silicon substrate, is described in this paper. The new technology...
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