The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
A novel N-JFET structure, combined with an innovative control gate between the uniform P-top and source is proposed. Control gate has a heavily doped P-type and a gap to uniform P-top. Pinch-off voltage of the JFET device can be easily adjusted by the size of the gap, while the breakdown voltage can be kept in the range of 700V ∼ 800V. Rather than using 3D simulation which is more time consuming,...
In this work, a trench power MOSFET (UMOS) with vertical RESURF is investigated. And the influence of some key parameters on UMOS static performances are simulated and analyzed by TCAD-Process. The proposed RESURF conventional trench gate UMOS is able to achieve better UIS performance while maintaining a specific low on state-resistance with breakdown voltage over 100 Volts. Here we are proposing...
A 600–800 V, BCD technology platform is presented in ultra-high voltage applications. An innovative feature is that all the devices have been realized by using a fully implanted technology in a p-type single crystal without an epitaxial or a buried layer. Ultra-high voltage triple RESURF LDMOS with the breakdown voltage up to 600–800V as well as low voltage CMOS and BJT have been achieved using this...
A novel 4H-SiC metal semiconductor field effect transistor with localized high-doped P-buffer layer is proposed in this paper. Compared with conventional structure, because of the higher doped concentration in the P-buffer layer between the gate and the drain, greater depletion layer generates and extends to the channel, which reduces the concentration of channel carrier and modulates electric field...
Broadband access networks using passive optical network technology can extend the transmission distance and increase the transmission capacity of carrier networks, but the bandwidth capacity of single channel will be unable to offer the enough demand for the digital life of the future. Therefore, to build the WDM-EPON architecture to satisfy huge bandwidth request is a perfect choice. This paper proposes...
The difference in the number of contacts across different transistors and standard cells results in current variations across the channel. In this work, we present test structures to target this effect and characterize and quantify the impact on 45 nm SOI silicon. After comparing the impact of contact resistance between 65 nm and 45 nm silicon, we provide and analyze our 45 nm test structure results...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.