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We report on the progress towards a high efficiency InGaN/Si tandem hybrid solar cell. The proof of principle has been demonstrated in a 5 × 5 mm III-nitride/Si dual junction solar cell, with p/n GaN junction grown by molecular beam epitaxy (MBE) functioning as the top cell and a standard n-type Si wafer with an Al doped p-type surface functioning as the bottom cell. An open circuit voltage (Voc)...
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