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The resistance switching characteristics of Cu doped HfO2 film are investigated for nonvolatile memory. Two stable states can be achieved under both pulse and DC electrical stress. Good performances including large storage window, fast operation speed, good endurance, and long time retention are shown in this device. The metallic filament is confirmed as the physical origin for resistance switching...
In this letter, the unique reproducible nonpolar resistive switching behavior is reported in the Cu-doped ZrO2 memory devices. The devices are with the sandwiched structure of Cu/ZrO2:Cu/Pt. The switching between high resistance state (OFF-state) and low resistance state (ON-state) does not depend on the polarity of the applied voltage bias and can be achieved under both voltage sweeping and voltage...
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