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In this work, we depart from the cell-based percolation model of gate dielectric breakdown (BD) to propose analytical models for the SET and RESET statistics in resistive switching memory (RRAM). The SET or RESET statistics model consists of two basic elements: (i) a cell-based geometrical model to describe the dependence of the resistive switching (RS) distribution on the defect generation in the...
The quantum point contact (QPC) model, originally developed to model the conduction after soft and hard breakdown events in thin-oxide MOS devices, is applied to resistive random access memories (RRAM). The QPC model is based on the idea that the conducting filament (CF) behaves as a quantum wire and it is shown to adequately describe the conduction in the low-resistance state (LRS) and in the high-resistance...
The resistance switching characteristics of Cu doped HfO2 film are investigated for nonvolatile memory. Two stable states can be achieved under both pulse and DC electrical stress. Good performances including large storage window, fast operation speed, good endurance, and long time retention are shown in this device. The metallic filament is confirmed as the physical origin for resistance switching...
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