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In this paper, the reproducible nonpolar resistive switching is demonstrated in devices with the sandwiched structure of Au/poly(3,4-ethylene-dioxythiophene): polystyrenesulfonate/Au for nonvolatile memory application. The switching between high resistance state (OFF-state) and low resistance state (ON-state) does not depend on the polarity of the applied voltage bias, which is different from both...
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