The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
A simple electrochemical deposition method is introduced for the preparation of a hierarchical nanostructure comprised of graphene and carbon spheres. The carbon spheres are used as nano-spacers to separate graphene nanosheets, improving properties. This method allowed for the one-step preparation of a fibrous, flexible supercapacitor electrode. The fibrous, flexible supercapacitors fabricated based...
In the past we were able to drive back-gated 2D graphene transistors to saturation regime. Now we present the realization of these properties in double-gated graphene nanoribbon field effect transistors (GNR FETs). We were able to achieve Ion/Ioff ratio of 103 using either top or back-gates and we analyzed the high field characteristics of such devices.
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.