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In this study, it is found that the temperature measurement using body diode of SiC-MOSFET is greatly affected by the bias voltage between gate and source, unlike using body diode of Si-MOSFET. We introduce a method that it is possible to measure the junction temperature correctly by applying a suitable negative bias between G-S. Hence, the heat resistance evaluation method for the SiC power module...
In this paper, we demonstrate a high heat resistant bonding method by Cu/Sn transient liquid phase sintering (TLPS) method can be applied to die-attachment of silicon carbide (SiC)-MOSFET in high temperature operation power module. The die-attachment is made of nano-composite Cu/Sn TLPS paste. The die shear strength was 40 MPa for 3 × 3 mm2 SiC chip after 1,000 cycles of thermal cycle testing between...
Thermal resistance evaluation of silicon carbide (SiC) power module for high-temperature operation has been performed in order to define the precise thermal resistance in real package structure. Transient thermal analysis method using SiC-Schottky barrier diode (SBD) is applied to measure the thermal structure function in wide temperature range from 50°C to 250°C. The module structure consists of...
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