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In this paper, the effect of the titanium oxide-based tunnel barrier on the non-linearity and switching uniformity of resistive random access memory has been investigated with the object of achieving excellent device non-linearity and reliability for cross-point array applications. To form the tunnel barrier of titanium oxide, its thickness was engineered using the deposition time. The tunnel barrier...
We demonstrate a selector device with excellent performances (JMAX > 107A/cm2, switching speed < 20ns) at the 30nm cell size. Furthermore, these promising device characteristics were achieved in a fully CMOS compatible stack (W/Ta2O5/TaOx/TiO2/TiN) with extremely thin oxide layer (< 10nm). Through the comprehensive understanding on the exponential I–V curve, the effect of intrinsic/extrinsic...
Current overshoot has severe effects on the reliability of resistive random access memory (RRAM). It is well known that the current overshoot during the SET process is caused by parasitic capacitance. In this letter, we observed a different type of current overshoot during the RESET process. The RESET current overshoot was confirmed to have severe effects on the endurance of RRAM. We also demonstrated...
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