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A new method of two-step selective area growth (SAG) by RF-plasma-assisted molecular beam epitaxy is developed, enabling the growth of uniform arrays of thin GaN nanocolumns (NCs) with diameters <50 nm. In the SAG, the migration-enhanced epitaxy mode with an alternating supply of Ga and active nitrogen was employed during the initial growth of NCs on small-nanohole-patterned substrates to complete...
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