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Ultra thin Ni-silicides were formed on silicon-on-insulator (SOI) and biaxially tensile strained Si-on-insulator (SSOI) substrates. Epitaxial NiSi2 layers were formed with a 3 nm Ni layer at T > 400°C, while a polycrystalline NiSi layer was with a 5 nm thick Ni layer. The NiSi2 layer quality advances with increasing temperature. A very thin Pt interlayer, to incorporate Pt into NiSi, forming Ni...
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