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Polymer-like thin films have been deposited on glass and silicon substrates at temperatures in the range 300-673 K, by a plasma enhanced chemical vapor deposition (PECVD) method using thiophene (C 4 H 4 S) as a precursor. A power with radio frequency (13.56 MHz) was applied for the ignition of the plasma, and hydrogen and Ar(argon) were used as the bubbler and the carrier gases, respectively...
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