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The optical properties of digital-alloy InGaAlAs grown with (In0.53Ga0.47As)n/(In0.52Al0.48As)n short-period superlattices by molecular beam epitaxy as a function of the period length n, n=1, 2, 4, 5 monolayers (MLs), have been investigated by using excitation-laser power (Iexc)-dependent photoluminescence (PL) and emission-photon energy-dependent time-resolved PL at 10K. With increasing n from 1...
In this study the formation of a semiconducting InSb layer, preceded by the growth of an intermediate layer of InAs quantum dots, is attempted on (001) GaAs substrate. From the analysis of atomic-force-microscopy and transmission-electron-microscopy images together with Raman spectra of the InSb films, it is found that there exists a particular layer-thickness of ~0.5μm above which the structural...
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