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We have fabricated III-nitride metal-oxide field effect transistors (MOSFETs) using high-k HfO 2 as a gate oxide. Two types of MOSFETs were studied; GaN MOSFETs and AlGaN/GaN MOSFETs. In the case of GaN MOSFETs, the maximum transconductance of 45mS/mm has been obtained. This is seven times larger than the best-reported value, to our knowledge, for the normally-off GaN MOSFETs with SiO ...
We have investigated using X-ray microdiffraction (XRMD) and transmission electron microscopy (TEM) the microstructures of Direct Silicon Bonding (DSB) substrates which were prepared by bonding a Si(011) wafer to a Si(001) wafer. XRMD was performed to measure the local lattice spacing and tilting in the samples before and after the interface oxide out-diffusion annealing. Diffraction analyses for...
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