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In this paper, electroless-NiB film was deposited on insulator/Si activated with PdCl2 as the barrier layer to prevent the diffusion of Cu into Si. This was done without any conventional pretreatment as modified by self-assembled monolayer (SAM). The results show that the NiB layer is highly uniform and the defects of the NiB layer is decreases with the increasing deposition time. After annealed at...
In this paper, electroless-NiB film was deposited on insulator/Si activated with PdCl2 as the barrier layer to prevent the diffusion of Cu into Si. This was done without any conventional pretreatment as modified by self-assembled monolayer (SAM). The results show that the NiB layer is highly uniform and the defects of the NiB layer is decreases with the increasing deposition time. After annealed at...
Copper nanowire is a promising material in the electronic packaging industry. However, at present, most of the preparation methods of Cu nanowires growing on substrates are highly dependent on templates or need relatively high temperature. In this study, Cu nanowires growing on substrates are synthesized by both pulse current electrodeposition and electroless plating, which is both template-free and...
Levelers have great influence on residual stress of electrodeposited film used in TSV. In this study, 2-MP (2-mercaptopyridine), JGB (Janus green B) and 2-ABT (2-aminobenzothiazole) are used as levelers to study the effects of different levelers on residual stress. The film stress deposited with different levelers decreases in the order of 2-MP, JGB and 2-ABT and closely related to grain size. Grain...
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