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In TSV copper electroplating, the goal is to achieve superfilling deposition. In order to reach the bottom-up in TSV copper electroplating, some additives (accelerator suppressor and leveler) are added into the electroplating bath. To know the relationship between additives in the plating solution is very important. In the present work, by means of linear sweep voltammetry (LSV) and cyclic voltammogram...
Through silicon via technology is one of the critical and enabling technologies for 3D packaging. 300 mum deep vias with a diameter of 50 mum were filled by copper electroplating with CuSO4 and H2SO4 as base electrolyte. Chloride ions, accelerator and leveler were added. The effect of leveler concentration on filling performance was studied. Electrochemical measurements were used to investigate the...
Though silicon vias filled by pulse reversal current, and influences of frequency of pulse current and reverse current density are investigated. Chronopotentiometry was applied to analyze the principle of these effects. It was found that when frequency is too high, the reverse current was mainly consumed in process of charge-discharge of electric double layer; it cannot play the role of dissolving...
Deep via filling is one of key technologies of 3D packaging. Vias are commonly filled by electroplating. Since cupric transportation in vias is limited by diffusion, Current density is one of the most influential factors for copper plating in vias. We investigated new additive of accelerator, suppressor and leveler. Simulation of the competitive adsorption ability of accelerator and suppressor at...
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