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The electrical and physical properties of PrxAl2−xO3 on metal-oxide-semiconductor gate dielectric were investigated. Amorphous PrxAl2−xO3 films with the thickness of 15 nm were deposited by electron-beam evaporation under a typical dielectric constant and equivalent oxide thickness of 18 and 3.3 nm, respectively. Leakage current decreased from 48mA/cm2 to 3.4mA/cm2 at a gate voltage of 1V after 500...
The electrical and physical properties of PrxAl2−xO3 on metal-oxide-semiconductor gate dielectric were investigated. Amorphous PrxAl2−xO3 films with the thickness of 15 nm were deposited by electron-beam evaporation under a typical dielectric constant and equivalent oxide thickness of 18 and 3.3 nm, respectively. Leakage current decreased from 48mA/cm2 to 3.4mA/cm2 at a gate voltage of 1V after 500...
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