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Solution‐processed organometal trihalide perovskite photodetectors show a high photoconductive gain of above 400 across the UV to NIR range at a very low bias of −1 V. The charge traps caused by large concentrations of Pb2+ cations at the top surface of the perovskite film are critical for achieving high gain in these devices via a trapped‐hole‐induced electron injection mechanism.
On page 1912, J. Huang, and co‐workers develop a solution‐processed organolead trihalide perovskite photodetector that combines a high photoconductive gain with a broad spectral response across the ultraviolet (UV) to the near‐infrared (NIR). The hole traps at the top surface of the perovskites are exploited to boost the performance with an ingenious device design at extremely low driving voltage,...
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