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By designing oxidation-reduction reaction, epitaxial growth of silicon-germanium (Si1−xGex: 0≤x≤1) films on Si(001) at low temperature has been achieved using reactive thermal CVD (RTCVD). Si2H6 and GeF4 are used as source gases. The temperature dependence of growth kinetics has been investigated. The results indicate that films grown at high temperature tend to be polycrystalline; on the contrary,...
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