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Ultrathin Cu films with thicknesses d between ~10 and 40 nm were thermally evaporated onto ~500-nm thick SiO 2 on Si(100) substrates in an ultra high vacuum (UHV) chamber with a base pressure of 5x10 -10 torr. The sheet resistance R (Ω/ ), was measured in situ at different film thicknesses by a collinear four-point probe. The infinite R at d<10 nm suggested that the film...
In this paper, the effect of chemical-mechanical polishing (CMP) of silicon nitride films was investigated using X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM). Silicon nitride films with different deposition methods (PECVD and LPCVD) and two different silica-based slurries were studied. The surface chemical structure of as-deposited LPCVD film is slightly better than that...
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