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The energy harvester using magnetostrictive materials (e.g., Metglas, Terfenol-D and Galfenol) is receiving increased attention [1]-[5]. However, prediction of performance for the magnetostrictive harvester is complicated because the device exhibits nonlinear magnetomechanical coupling characteristics and the stress-induced eddy current loss, which is the leading limiting factor of the device.
In this paper, tin whisker behaviour of electroplating tin coating was studied in different environments. Different thickness of electroplating tin coating on copper substrate had been tested. Two different environmental conditions had been applied :one temperature tests (70 °C)and one external force tests(70 °C /17.5N). The growth of tin whisker was studied by using scanning electron microscopy (SEM)...
In this paper, tin whisker behaviour of electroplating tin coating was studied in different environments. Different thickness of electroplating tin coating on copper substrate had been tested. Two different environmental conditions had been applied :one temperature tests (70 °C)and one external force tests(70 °C /17.5N). The growth of tin whisker was studied by using scanning electron microscopy (SEM)...
Optimization of shrinkage and crack resistance performance of Engineered Cementitious Composites (ECC) is investigated due to ECC with higher drying shrinkage. Free shrinkage tests were used to research the influence of fiber content, superplasticizer (SP) and finely ground quartz powder (QP) on the total drying shrinkage value of ECC. Restrained drying shrinkage tests (ring tests) were used to research...
It is known to deposit hard thin films, such as tetrahedral amorphous carbon (ta-C), using a filtered cathode vacuum arc (FCVA). These ta-C films have interesting and useful properties because of the high sp 3 fraction of carbon atoms (up to 87%) in the film. However, the high internal stress in the films can limit their applications as the film may flake away from the substrate. In order...
N-channel enhancement-mode MOSFETs have been fabricated in silicon-on-insulator (SOI) films prepared by both infra-red and laser zone-melting recrystallisation (ZMR). The SOI films are subjected to a lateral tensile stress due to the thermal expansion coefficient difference between silicon and silicon dioxide. The devices in the stressed films exhibit higher surface electron mobilities than those...
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