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An insulated gate bipolar transistor (IGBT) physical model with field stop cell structure is presented in this paper. The extraction method for all parameters is also given here. The parameters are extracted for Fuji Electric 1.7kV/300A IGBT (2MBI300VN-170-50). The accuracy of the model is verified by experiments.
Based on the existing voltage balancing scheme for two series HV-IGBTs (High voltage insulated gate bipolar transistors) with active clamping and status feedback, this paper focuses on the characteristics of IGBT with active clamping circuit. First, the previous series IGBT model is improved according to the experiment results in order to give accurate feedback signal in the active clamping sub-circuit...
The tail current of insulation gate bipolar transistor (IGBT), which is difficult to describe accurately, influences the series connection characteristics of IGBTs remarkably. In this paper, the series connection characteristics of 6500V/600A high voltage IGBTs (HV-IGBTs) are analyzed, and a behavior model for series connected HV-IGBTs is proposed. The model is implemented in PSIM with switches, capacitances...
Obvious differences are observed between simulation and experimental results for series-connected insulated-gate bipolar transistors (IGBTs) using current IGBT models. Here, the cause of these errors is analyzed in detail. A physical model based on more effective assumptions for a 2-D structure is proposed in this paper. The relationship between carrier concentration and lifetime is considered in...
The large-size planar DC bus bar is widely used in high power converters, whose stray parameters are significantly affected the converter reliability and performance. Taking the example of an actual 315kW/400V inverter, the design, simulation and analysis for its bus bar stray parameters is described in detailed. Being different from the conventional method that considers the bus bar conductor as...
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