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The edge field enhanced deep depletion phenomenon in metal-oxide-semiconductor (MOS) structure was demonstrated. The analysis in inversion to deep depletion of ultra-thin SiO2 and HfO2 was conducted using critical field model. By examine the field ratio between edge and bulk, it is observed that the HfO2 has larger ratio than SiO2. It is supposed the edge field enhanced deep depletion phenomenon dominates...
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