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The authors have achieved a remarkably wide range (~1.2 V) of differences in flatband voltage (Vfb) by using a combination of metal alloy (Pt-W)/La2O3 gate stacks. The controllable range is about 3 times greater than that of Hf-based gate stacks. The wide range of V fb can be maintained even after annealing in forming gas and oxidizing gas ambients. The authors consider that this is attributed to...
This paper reports a systematic investigation of flatband voltage (Vfb), properties for HfO2-SiO2-Si capacitors using metal alloy electrodes of Pt-W alloy as a means of tuning work function (WF). It was found that the value of Vfb, for W (lower WF) is retained after forming gas annealing (FGA) and oxidizing gas annealing (OGA) processes, while that for Pt (higher WF) strongly depends on the annealing...
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