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The valence band offset (VBO) at a InN/In0.3Ga0.7N(0001) as well as HfO2/InN(0001) heterojunction is investigated by X‐ray photoelectron spectroscopy using monochromated AlKα radiation. The InN and In0.3Ga0.7N films were grown using plasma‐assisted molecular beam epitaxy, whereas HfO2 layers were deposited by plasma‐assisted electron beam evaporation. The VBOs were determined by analysing the core...
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