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Short‐wavelength infrared (SWIR) photodetectors are of great interest owing to their unique advantages of SWIR imaging such as better penetration ability and improved sensitivity that allow high‐resolution imaging. Commercially, extended InxGa1‐xAs heterojunction detectors with cut‐off wavelengths beyond λc = 1.7 µm are incorporated into SWIR imagers. However, their large dark current and limited...
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