The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Nanopatterned sapphire substrates were fabricated by annealing of patterned Al thin films. Square-patterned Al thin films with the diagonal length of 600 nm, period of 1 um and height of ∼200 nm were obtained by the Laser Interference Lithography and Reactive Ion Etching. Patterned Al thin films were subsequently subjected to dual stage annealing due to the melting temperature of Al thin films (660 ...
GaN nanoparticles were prepared on sapphire (0001) substrates with ZnO sacrificial layers by self assembly of Ga2O3 films in their reaction with NH3. ZnO sacrificial layers with different thicknesses and Ga2O3 films were deposited on sapphire substrates in turn by a radio frequency (RF) magnetron sputtering system. Nitridation of the Ga2O3 films was then carried out in a quartz tube furnace. The effect...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.