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A comprehensive investigation for the structural and electrical influences of via-last through silicon via (TSV) process on the 0.18-μm MOSFETs has been proposed in this work. The well-isolated TSVs don't affect the threshold voltages and drain currents in terms of the MOSFET distances to the TSVs, the size of the TSVs, the configuration of TSVs, and the positions of MOSFETs by the TSVs. Over-wafer...
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