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A switchable dual-band low power low noise amplifier operated at 900MHz/1.95GHz has been designed for GSM/TD-SCDMA applications using 0.13 μm CMOS process. To achieve noise matching and input matching at both bands, a tunable capacitance bank and a switchable inductor for L-match are utilized. Four gain modes are accommodated with current splitting technique at the second stage. The post-layout simulated...
A reconfigurable dual-band low noise amplifier (LNA) for 3.4-3.6 GHz IMT-Advanced and 4.2-4.8 GHz UWB systems is presented in this paper. Two different input matching networks with source-inductive-degeneration cascode configuration are used to switch at two different frequency bands. The parallel capacitors between the input MOSFETs' gate and source are used to optimize noise factor of the LNA. The...
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