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Well-calibrated predictive TCAD simulations are employed to generate target data for compact models for better pre-V1.0 PDK development. A reliable re-centering technology has been developed which can accurately migrate the global and local variability and the corresponding corners. FinFETs calibrated to published data by Intel at the 14nm technology node are employed as test-bed devices.
A new cell structure power MOSFET, which exhibits a lower on-state resistance and higher channel density than those with conventional layout geometry, is proposed. Vertical trench power MOSFETs are generally designed by either square or strip cell geometry; each has its own advantages and drawbacks. A new 'asymmetric wing cell' structure power MOSFET is proposed, fabricated and analysed. The on resistance...
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