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SemipolarInGaN quantum wells are grown on (001) Si substrates with an Al‐free buffer and wafer‐scale uniformity. The novel structure is achieved by a bottom‐up nano‐heteroepitaxy employing self‐organized ZnO nanorods as the strain‐relieving layer. This ZnO nanostructure unlocks the problems encountered by the conventional AlN‐based buffer, which grows slowly and contaminates the growth chamber...
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