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Based on a full-wave approach, the radio frequency (RF) voltage drop between any two points of any printed circuit interconnect is modeled numerically. The proposed modeling approach has been validated experimentally. The ability to predict the RF voltage drop on any printed circuit interconnects, such as ground conductor, allows designer to assess EMI compliance for a specific layout of signal path...
A new compact LDMOS is introduced in this paper for circuit simulation. Features covered in this model relevant for a LDMOS device include: unique bias dependent drift region resistance model accounting for velocity saturation, bias dependent overlap region resistance model, dual Isub model to model Iii current in different region in the device and different biases, multiple junction modeling for...
This paper presents a new aged timing simulation methodology that can be used for hot-carrier reliability assurance of VLSI. This methodology consists of a compact model and a unique algorithm. The ratio based model simplifies the aging I-V characteristics of MOSFET over time into the aged timing and the corresponding ratio at gate-level. A new algorithm is proposed including a gate primitive decomposition...
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