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Modern NAND flash memory chips provide high density by storing two bits of data in each flash cell, called a multi-level cell (MLC). An MLC partitions the threshold voltage range of a flash cell into four voltage states. When a flash cell is programmed, a high voltage is applied to the cell. Due to parasitic capacitance coupling between flash cells that are physically close to each other, flash cell...
With the continued scaling of NAND flash and multi-level cell technology, flash-based storage has gained widespread use in systems ranging from mobile platforms to enterprise servers. However, the robustness of NAND flash cells is an increasing concern, especially at nanometer-regime process geometries. NAND flash memory bit error rate increases exponentially with the number of program/erase cycles...
As NAND flash memory manufacturers scale down to smaller process technology nodes and store more bits per cell, reliability and endurance of flash memory reduce. Wear-leveling and error correction coding can improve both reliability and endurance, but finding effective algorithms requires a strong understanding of flash memory error patterns. To enable such understanding, we have designed and implemented...
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