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This letter discusses the design of high-aspect-ratio T-gates on molecular beam epitaxy (MBE)-grown nitrogen-polar (N-polar) GaN/AlGaN metal–insulator–semiconductor high-electron-mobility transistors (MIS-HEMTs) for high power-gain cutoff frequency . A 351-GHz is demonstrated, which is the highest published to date for an N-polar GaN HEMT. Novel 80-nm-long 1.1--tall T-gates...
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