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The usage of the Gadolinium oxide (Gd2O3) as sensitive region in the MOS (Metal-Oxide-Semiconductor)-based dosimeters was investigated in the presented study. The Gd2O3 films grown on p-type Si (100) by RF magnetron sputtering were annealed at 800°C under N2 ambient. The back and front metal contacts were establishes to produce MOS capacitors. The fabricated Gd2O3 MOS capacitors were irradiated in...
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