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A method for the determination of saturation magnetization of grain-oriented silicon steel sheets using the super-conducting magnet and the magnet field measurement instrument is suggested. An example is also given to illustrate the method.
This paper presents the first-principles study of an ultra-thin HfO2 on SiGe/Si substrate. The strong stress in hafnia layer caused by lattice mismatch significantly deforms the structure in this layer, and alters the valence-band offset between HfO2 and SiGe. These phenomena should significantly affect the properties of CMOS devices associated with an ultra-thin HfO2 dielectric film.
Twisted direct silicon bonded (DSB) substrate demonstrates a higher hole mobility advantage over (110) bulk substrate for PFET. The mobility shows a (110) layer thickness dependence with the thinner DSB layer having a higher hole mobility. 25% on-current improvement is obtained for thin DSB PFETs at long channel (Lg= 2 mum), 10% higher at short channel (Lg = 36 nm) compared to (110) bulk PFETs. Moreover,...
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