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Performance of a detector based on AlGaAs/InGaAs/GaAs-material system was studied. The detector was comprised of large serpentine array of high-electron mobility transistors (HEMTs) connected in series. The floating drain contact of each transistor (except the last one) served as a source for the next one. Detection of terahertz (THz) radiation was based on the excitation of electron plasma oscillations...
We present the responsivity spectra in the 0.2–0.4 THz range at low temperature of a AlGaAs/GaAs field-effect transistor connected to an on-chip integrated antenna. We fabricated asymmetric plasmonic microcavities to obtain down-converted signals from the intrinsic nonlinearity of 2D electron plasma oscillations. Finite-element modeling simulations of the 2D electron oscillations and electromagnetic...
We report on room-temperature plasmonic detection of the thermal emission from a black body in the terahertz and mid-infrared domains by dual-grating-gate InAlAs/InGaAs/InP high electron mobility transistors (HEMTs). In such detectors, the asymmetric grating gate of a large area acts as an effective antenna that improves the performance in the two spectral domains.
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