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We fabricated ferroelectric (K,Na)NbO3 (KNN) capacitors on Pt(111) or Pt(100) bottom electrodes with different substrate temperature by pulsed laser deposition. The annealing effect in O2 was also investigated. KNN film on Pt(100) substrate exhibited crystal grain clearly than that on Pt(111). The 2Pr and 2Vc, measured by ferroelectric tester, of Pt/KNN/Pt(111) for 400°C and 600°C were 4.28 and 4...
We fabricated ferroelectric (Pb,La)(Zr,Ti)O3 (PLZT) capacitors by pulsed lase deposition (PLD) and investigated the effects of substrate temperature during PLD, Pb contents of the target, annealing temperature and period to improve ferroelectric properties. The R.T. deposition with higher Pb contents in the target (1.27) and subsequent annealing at 750°C for 10 min exhibited the best ferroelectric...
Aluminum-doped zinc oxide (AZO) and indium tin oxide (ITO) were employed as a conductive oxide buffer layer on Pt(111) substrate by pulsed laser deposition (PLD). Then, PbLaZrTiOx (PLZT) thin films (thickness: 500 nm) were prepared by the sol-gel method. Finally, AZO and ITO was deposited by PLD as top electrodes with metal through mask having 50 ∼ 500 µm diameter to evaluate ferroelectric properties...
PbLaZrTiOx (PLZT) thin films were deposited on Pt(111) substrate by the sol-gel method, then aluminum-doped zinc oxide (AZO) and indium tin oxide (ITO) top electrodes were deposited by pulsed laser deposition (PLD). We evaluated degradation characteristics by 3% hydrogen atmosphere annealing in 200°C, 1Torr. The polarization ratio of PLZT capacitors with 200 nm top electrodes thickness was maximum...
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