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Operation mechanisms of devices with electrically floating regions have been analyzed by device simulations. An insulator has been modeled as a wide-gap semiconductor and the device simulation has been carried out in the whole region including insulator and floating regions. By using this approach, we have evaluated electrical properties of the capacitances used to represent such devices; i.e., the...
A model of ohmic connection through an n-type drain, metal, and a p-type drain in complementary metal-oxide-semiconductor (CMOS) inverters has been developed. This model is based on drift-diffusion (DD) transport, and in the model, the metal that connects nMOS and pMOS is replaced with an n + (or p + ) low-resistance semiconductor. The diode formed between the n-type and p-type drains...
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