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Change of linearity and gain with different drain and gate bias has been studied for AlGaN/GaN HEMT on Sapphire substrate. While linearity increases with higher drain bias, maximum gain of the device decreases. Generation of more phonon and its related scattering of electrons decrease the mobility of carries. It further minimizes the drain current at high longitudinal field on 2DEG channel.
High quality pseudomorphic Al0.15Ga0.85As/GaAs heterostructure was grown on an semi-insulating GaAs(100) substrate by Molecular Beam Epitaxy(MBE). Analysis of this structure was done by Photoluminescence (PL), HALL and High Resolution X-Ray diffraction (HRXRD). The nominal structure was confirmed by HRXRD, and aluminum mole fraction was measured from peak separation of the AlGaAs-GaAs (004) reflections...
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