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Silicon oxynitride films have been deposited with SiCl4 by remote-plasma enhanced chemical vapor deposition (PECVD) at a substrate temperature of 250°C. Different mixtures of O2 and NH3 were used to obtain different oxynitride compositions ranging from SiO2 to an stoichiometry close to that of silicon nitride. Rutherford backscattering spectrometry was used to determine the chemical composition of...
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