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This paper presents a highly linear dual-band mixed-mode polar power amplifier (PA) fully integrated in a standard 65 nm bulk CMOS process. An ultra-compact single-transformer-based passive network provides optimum load impedance transformations simultaneously at two operating frequencies, parallel power combining, and even-harmonic rejection without any tuning elements or band selection switches...
This session showcases multiple state-of-the-art designs on wireless transceiver front-end as well as fully integrated power amplifiers including a dual-band linear digital polar power amplifier, a broadband mm-wave linear power amplifier and a mm-wave switching power amplifier.
This paper presents a highly linear dual-band mixed-mode polar power amplifier fully integrated in a standard 65nm bulk CMOS process. An ultra-compact single-transformer passive network provides dual-band optimum load-pull impedance matching, parallel power combining, and double even-harmonic rejection without any tunable element or band selection switch. The mixed-mode architecture leverages both...
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