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High injection electron current in an LDNMOS can lead to a strong snapback and latch-up-like characteristic. It is susceptible to latch-up-like in high-voltage ICs, if its holding voltage is lower than the power supply voltage. A method to raise the LDNMOS holding voltage is proposed and verified in a 0.35- 20-V/5-V BCD process without additional masks. It is realized by adding a relative...
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