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We have used multi-step surface passivation process integrating electrochemical reduction and UV exposure with native sulfidization by H2S gas to obtain high quality ZnS/p-HgCdTe interface. It shows very low parasitic interface charge density of the order of 1010cm−2. The insulating ZnS layer also exhibits very high resistivity of ∼1012 Θcm. The resulting fabricated HgCdTe-MISFETs show 2D quantum...
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