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A two-step growth process of gallium phosphide (GaP) epilayer on silicon substrate is carried out using metal organic vapor-phase epitaxy (MOVPE). This process includes the growth of a low-temperature GaP nucleating layer and a high-temperature GaP epilayer. In the first step, a GaP nucleating layer of thickness ∼80nm with high V/III ratio ∼1725 is grown at 425°C. This is followed by the growth of...
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