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Metal organic vapour phase epitaxy (MOVPE)-grown InGaAs quantum wells (QWs) with low and high built-in strain are investigated by using complementary spectroscopic techniques like photoluminescence (PL) and surface photovoltage spectroscopy (SPS). The built-in strain is varied by increasing the indium content while keeping the QW thickness constant. An extreme case of high built-in strain of ultrathin...
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