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A p-n junction under reverse bias avalanche breakdown condition is capable of producing high frequency rf power in Impatt mode. With the advancement of Device Technology, the present state of art reports realization of alloy Si-Ge junction, Si-Ge hetero junction. Introduction of a n-Ge and p-Ge impurity bumps near the junction face on respective side of Si p-n junction leaves an asymmetrical hetero...
Extensive simulation experiments are carried out for the first time, to study the photo-irradiation effects on the high frequency characteristics of III-V GaN (Gallium Nitride) based Top-Mounted and Flip-Chip IMPATT oscillators at MM-wave window frequency (140.0 GHz). MM-wave properties of un-illuminated GaN IMPATTs are compared with those of conventional Si, GaAs and InP IMPATTs, under similar operating...
Simulation investigations on 4H-SiC based double-drift avalanche-transit-time diode clearly establishes it's potential at higher terahertz region. Further, the effects of punch-through on the terahertz behavior of the device are studied for the first time, through a generalized simulation technique. The computed results revealed that for a fixed bias current density, when the space-charge effect is...
The millimeter and sub-millimeter wavelength range for a long time has been used in many research applications. This frequency range has been utilized in spectroscopy, radio astronomy, plasma diagnostics, and the study of the earth's atmosphere. Even millimeter waves are now used in commercial applications as well, particularly in the security sector. An example of a solid-state source of this range...
The prospects of single drift region (SDR), flat profile GaN IMPATT diode as terahertz source are studied through a simulation experiment. The study indicates that GaN IMPATT device is capable of generating high RF power (PRF) of 14.4 W at around 0.7 THz with an efficiency of 20.0 %. The effects of photo-illumination on the GaN device is also investigated using a modified double iterative simulation...
The millimeter-wave properties of double drift region (p+ p n n+ type) InP IMPATT diodes are studied for the first time at elevated junction temperature. The study indicates that the device is capable of generating a CW power of 427.0 mW and 358.4 mW at 95 GHz and 145 GHz frequencies respectively. The effects of optical-illumination on the high frequency properties of the device are investigated through...
The dynamic properties of an InP p pnn IMPATT diode at 0.5 terahertz are studied through a simulation experiment. The study indicates that the InP IMPATT may deliver 27.0 mW of RF power at 0.5 terahertz with an efficiency of 6.3%. However, the realistic consideration of series resistance has imitational effect on exploitable power level from the THz device. The effects of photo-illumination on the...
Terahertz characteristics of opto-sensitive InP based double drift IMPATT diode with and without optical radiation are studied and the results are compared with another opto sensitive semiconductor 4H-SiC based IMPATT at same operating frequency (0.5 THz) . The effects of parasitic series resistance on the THz frequency performance of the simulated InP based diode is also analysed. Unilluminated IMPATT...
The dynamic properties of a 4H-SiC low-high- low double drift IMPATT diode operating at 0.5 THz region are studied through a simulation experiment. The study indicates that 4H-SiC IMPATT is capable of generating high RF power (3.7W) at 0.515 terahertz with high efficiency (13.5 %). However, the parasitic series resistance is found to produce a 10 % reduction in the negative conductance and the RF...
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