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Terahertz characteristics of opto-sensitive InP based double drift IMPATT diode with and without optical radiation are studied and the results are compared with another opto sensitive semiconductor 4H-SiC based IMPATT at same operating frequency (0.5 THz) . The effects of parasitic series resistance on the THz frequency performance of the simulated InP based diode is also analysed. Unilluminated IMPATT...
Simulation experiment is carried out on single drift region 4H-SiC based IMPATT devices for Ka-band operation. It is observed that 4H-SiC would far surpass its present rival Si in terms of power output and efficiency. However, the parasitic series resistance (Rs) would reduce the RF power output of the 4H-SiC IMPATTs. The value of Rs decreases as the doping profile of the diode changes from flat to...
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